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Reflective Object Sensor
OPB703 through OPB705, OPB703WZ through OPB705WZ,
OPB70AWZ through OPB70HWZ
Absolute Maximum Ratings (T A =25°C unless otherwise noted)
Storage Temperature Range
Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 sec. with soldering iron]
Input Diode
Forward DC Current
Reverse DC Voltage
Power Dissipation
Output Photodetector
Collector-Emitter Voltage
Phototransistor
Photodarlington
Emitter-Collector Voltage
Collector DC Current
Power Dissipation
Electrical Characteristics (T A = 25 ° C unless otherwise noted)
(OPB703, OPB703WZ, OPB704, OPB704WZ, OPB705, OPB705WZ, OPB704G, OPB704GWZ, OPB70HWZ)
-40°C to +80° C
240° C (1)
40 mA
2V
100 mW (2)
30 V
15 V
5V
25 mA
100 mW (2)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode (See OP265 for additional information — for reference only)
V F
I R
Forward Voltage
Reverse Current
-
-
-
-
1.7
100
V
μA
I F = 40mA
V R = 2 V
Output Phototransistor (See OP505 for additional information — for reference only)
V (BR)CEO
V (BR)ECO
I CEO
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Dark Current
30
5
-
-
-
-
-
-
250
V
V
nA
I CE = 100 μA
I EC = 100μA
V CE = 10 V, I F = 0, E E =0
Coupled
On-State Collector Current
OPB70HWZ
0.60
-
3.5
I C(ON)
OPB703, OPB703WZ
OPB704, OPB704WZ
OPB705, OPB705WZ
OPB704G, OPB704GWZ
0.30
0.20
0.15
0.50
-
-
-
-
2.5
2.5
1.0
6.0
mA
V CE = 5 V, I F = 40mA , d = 0.15” (3)(7)
V CE = 5 V, I F = 40mA , d = 0.20” (3)(6)
Crosstalk
I CX
OPB703, OPB703WZ
OPB704, OPB704WZ, OPB70HWZ
OPB705, OPB705WZ
-
-
-
-
-
-
20
20
10
μA
V CE = 5 V, I F = 40mA (6)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2) For OPB703, OPB704 and OPB705, derate linearly 1.67 mW/° C above 25° C.
(3) For OPB703WZ, OPB704WZ, OPB705WZ, OPB70BWZ, OPB704G, OPB704GWZ and OPB70HWZ derate linearly 1.82 mW/° C
above 25° C.
(4) The distance from the assembly face to the reflective surface is d.
(5) Crosstalk (I CX ) is the collector current measured with the indicated current in the input diode and with no reflecting surface.
(6) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman
Kodak, Catalog # E 152 7795.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue D 03/2012
Page 4 of 9
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
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相关代理商/技术参数
OPB705WZ 功能描述:光学开关（反射型，光电晶体管输出） Reflective Sensor RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel
OPB706A 功能描述:光学开关（反射型，光电晶体管输出） Output Phototranstr Input Diode RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel
OPB706B 功能描述:光学开关（反射型，光电晶体管输出） Reflective Sensor RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel
OPB706B 制造商:TT Electronics / OPTEK Technology 功能描述:ASSEMBLY REFLECTIVE ((NW))
OPB706C 功能描述:光学开关（反射型，光电晶体管输出） Reflective Sensor RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel
OPB707 制造商:OPTEK 制造商全称:OPTEK 功能描述:Reflective Object Sensors
OPB707A 功能描述:光学开关（反射型，光电晶体管输出） Reflective Sensor RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel
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